Carrier lifetimes in ion‐damaged GaAs

Temperature dependence of carrier lifetimes in InN

Time-resolved pump–probe transmission measurements were used to determine the temperature dependence of carrier lifetime for InN epilayers with unintentionally doped levels from 10 to 10 cm. The observed decay time at 20 K is well explained by a dominating radiative interband recombination, while at room temperature it is attributed to a defect related nonradiative recombination channel. The te...

Measurement of minority carrier lifetimes in semiconductors

The bulk lifetimes of minority ,carriers in n-type l :germanium, in both n and p-type silicon and in n-type magnesium germanide have been investigated at room temperature. The sample was illuminated with periodic light ·flashes produced by a spark gap. The transient change in conductance of the sample after illumination gave the lifetime. In germanium and silicon the measured bulk lifetimes had...

DETERMINATION OF LANDAU LEVEL LIFETIMES IN n-GaAs

Long exciton lifetimes in stacking-fault-free wurtzite GaAs nanowires

Spin lifetimes of electrons injected into GaAs and GaN

The spin relaxation time of electrons in GaAs and GaN are determined with a model that includes momentum scattering by phonons and ionized impurities, and spin scattering by the Elliot-Yafet, D’yakonov-Perel, and BirAronov-Pikus mechanisms. Accurate bands generated using a long-range tight-binding Hamiltonian obtained from empirical pseudopotentials are used. The inferred temperature-dependence...